| PART |
Description |
Maker |
| STF28N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| FDG316P |
High performance trench technology for extremely low
|
TY Semiconductor Co., Ltd
|
| FDC6318P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
| CES2321 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| FDN327N |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| CES2316 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| CES2312 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| CES2301 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| FHR2-T238 FHR2-T2381R1G FHN2-T238 FNR4-T238 FHR4-T |
High Stability Extremely Low Ohm Rating 高稳定性极低的电阻额定
|
http://
Willow Technologies Ltd
Willow Technologies Limited
Willow Technologies, Ltd.
|
| EKL |
Aluminum Electrolytic Capacitors, Radial Style, Polarized AI Electrolytic Capacitor, Extremely Long Lifetime, High Temp Range (125°C), High AC Rating
|
Vishay
|
| CZTA44-TR CZTA4410 |
SURFACE MOUNT EXTREMELY HIGH VOLTAGE NPN SILICON TRANSISTOR
|
Central Semiconductor Corp.
http://
|
| CMPTA4410 |
SURFACE MOUNT EXTREMELY HIGH VOLTAGE NPN SILICON TRANSISTOR
|
Central Semiconductor Corp
|
